Western Digital | ASA Computers

Ultrastar NVMe Series

Low Latency and Maximum Throughput for High-Transaction Workloads

OVERVIEW

Accelerate Access to Critical Data for Data-Intensive Workloads and Applications

Ultrastar NVMe series SSDs perform at the speed of today's business needs. Enabling faster intelligence & access to critical data, these SSDs meet the growing digital demands of your business applications. Ultrastar DC SN200 delivers extreme performance & ultra-low latency to the top tier of enterprise storage. It takes hyper-converged infrastructure (HCI) system throughput to new levels & helps scale on-line transaction processing (OLTP). Our Essential NVMe drives, Ultrastar DC SN640 & DC SN630, offer low latency & higher bandwidth for a seamless transition away from SATA SSDs in mixed-use & read-intensive applications. This high throughput & low latency delivers high performance for deeper insights & faster results for today's data intensive applications. Ultrastar DC SN340 provides a power efficient cost-optimized solution for very read - intensive applications & warm storage.

ultrastar-dc-sn200-left-western-digital Ultrastar-DC-SN630-NVMe-U.2-standingFront-connector product-hero-image-ultrastar-630-200-nvme-western-digital-new Ultrastar-DC-SN630-NVMe-U.2-standingL-connector-CLEAN-HR ultrastar-dc-sn640-western-digital ultrastar-dc-sn340-western-digital ultrastar-dc-sn260-aic-front-western-digital

Accelerate Access to Critical Data

Maximum Throughput

Up to 1.2M read IOPS to help power through demanding workloads

Low Latency

Predictable throughput for high-transaction workloads

Design Flexibility

Choice of form factors to support range of data centers requirements

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Highlights

  • Up to 1.2M random read IOPS
  • Capacities from 800GB to 30.72TB
  • High-performance PCIe Gen 3
  • Enterprise Data Durability Features
  • 96-Layer 3D NAND for Ultrastar DC SN640 and Ultrastar DC SN340
  • Options for read-intense and mixed-use workloads
  • Enterprise-class 2M hour MTBF4 reliability rating

Applications and Workload

  • Mission-Critical Database Applications
  • Highest Performance Tier Storage
  • Cloud and Hyperscale Computing
  • Analytical Processing (OLAP)
  • Boot and Edge
  • Hyper-Converged Infrastructure (HCI)
  • Virtualization
  • Content Delivery Network (CDN)
Ultrastar DC SN630

Outstanding Performance

Up to 2x the random read IOPS of the previous generation NVMe with the power of BiCS3, 3D NAND

High Capacity

Available up to 7.68TB per drive, allowing for larger storage per server than the previous generation

Quality of Service

Delivers its performance with a high quality of service, minimizing outliers and making it easier to meet demanding SLAs

960GB/800GB
1,920GB/1,600GB
3,840GB/3,200GB
7,680GB/6,400GB
General
Interface
PCIe Gen 3.1 x4 (Compliant to NVMe 1.3)
PCIe Gen 3.1 x4 (Compliant to NVMe 1.3)
PCIe Gen 3.1 x4 (Compliant to NVMe 1.3)
PCIe Gen 3.1 x4 (Compliant to NVMe 1.3)
Form Factor
U.2 2.5-inch drive
U.2 2.5-inch drive
U.2 2.5-inch drive
U.2 2.5-inch drive
Capacity1
960GB/800GB
1,920GB/1,600GB
3,840GB/3,200GB
7,680GB/6,400GB
Endurance (Drive writes per day, DW/D)2
0.8/2
0.8/2
0.8/2
0.8/2
Flash Memory Technology
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
Performance3 (Specified at 10.75W Average)
Sequential Read (max MiB/s, 128KiB)
2,690/2,690
2,660/2,670
2,510/2,500
2,520/2,540
Sequential Write (max MiB/s, 128KiB)
930/960
1,230/1,240
1,180/1,200
1,240/1,240
Random Read (max IOPS, 4KiB)
278,760/281,790
358,220/356,870
332,420/332,510
360,280/306,520
Random Write (max IOPS, 4KiB)
43,580/86,740
53,850/86,870
55,000/88,140
54,220/88,210
Mixed Random Read/Write (max IOPS 70%R/30%W, 4KiB)
107,350/188,480
170,390/253,390
163,350/238,500
170,250/273,960
Latency Distribution (Specified at 10.75W Average)
Random Read Latency (4KiB BS, QD1, 99.99%) (µS)
179/179
190/188
243/239
243/239
Reliability
Unrecoverable Bit Error Rate (UBER)
1 in 1017
1 in 1017
1 in 1017
1 in 1017
EOL Data Retention
3-month at 40°C
3-month at 40°C
3-month at 40°C
3-month at 40°C
MTBF (M hours)4
2
2
2
2
Annualized Failure Rate (AFR)
0.44%
0.44%
0.44%
0.44%
Limited Warranty5
5 years
5 years
5 years
5 years
Electrical
Requirement (DC +/- 10%)
12V
12V
12V
12V
Operating Power States (W, average)
10.75 & 8.75
10.75 & 8.75
10.75 & 8.75
10.75 & 8.75
Idle (W, average)
5.8
5.8
5.9
6.1
Environmental
Operating Temperature6
0° to 78°C
0° to 78°C
0° to 78°C
0° to 78°C
Non-operating Temperature
-40° to 85°C
-40° to 85°C
-40° to 85°C
-40° to 85°C
Physical Measurements
Width (mm)
69.85 +/-0.25
69.85 +/-0.25
69.85 +/-0.25
69.85 +/-0.25
Length (mm, max)
100.45
100.45
100.45
100.45
Weight (g, max)
95
95
95
95
z-height (mm)
7.00 +0.2/-0.5
7.00 +0.2/-0.5
7.00 +0.2/-0.5
7.00 +0.2/-0.5
Ultrastar DC SN200

Maximum Throughput

Up to 1.2M random read IOPS, ideal for data-intensive workloads

Ultra-low Latency

20μs write latency delivers consistent, extreme performance for high QoS in Enterprise, Cloud, and Hyperscale environments

High Availability

Dual port (2x2) capable 2.5-inch SFF drives enable high availability system designs

HH-HL Add-in Card
U.2 2.5-Inch Drive
General
Interface
PCIe 3.0 x8 NVMe 1.2
PCIe 3.0 x4 or 2x2 NVMe 1.2
Form Factor
HH-HL add-in card
U.2 2.5-inch drive
Capacity1
3 DW/D: 6.4TB / 3.2TB / 1.6TB
1 DW/D: 7.68TB / 3.84TB / 1.92TB
3 DW/D: 6.4TB / 3.2TB / 1.6TB / 800GB
1 DW/D: 7.68TB / 3.84TB / 1.92TB / 960GB
Maximum Terabytes Written (TBW)
3 DW/D: 35,040 / 17,520 / 8,760
1 DW/D: 14,016 / 7,008 / 3,504
3 DW/D: 35,040 / 17,520 / 8,760 / 4,380
1 DW/D: 14,016 / 7,008 / 3,504 / 1,752
Performance
Sequential Read (max MiB/s, 128KiB)
6,170
3,350
Sequential Write (max MiB/s, 128KiB)
2,200
2,100
Random Read (max IOPS, 4KiB)
1,200,000
835,000
Random Write (max IOPS, 4KiB)
3 DW/D: 200,000
1 DW/D: 75,000
3 DW/D: 200,000
1 DW/D: 75,000
Mixed Random Read/Write (max IOPS 70%R/30%W, 4KiB)
3 DW/D: 580,000
1 DW/D: 240,000
3 DW/D: 580,000
1 DW/D: 240,000
Write Latency 512B (µS)4
20
20
Reliability
Unrecoverable Bit Error Rate (UBER)
<1 in 1017
<1 in 1017
MTBF (M hours)5
2
2
Annualized Failure Rate (AFR)
0.44%
0.44%
Limited Warranty
5 years
5 years
Data Retention
3-month at 40°C
3-month at 40°C
Power
Requirement (DC, +/- 5%)
3.3V (aux) & 12V
3.3V (aux) & 12V
Operating (W,max)
25
25
Idle (W)
9
9
Physical Size
Z-Height (mm)
14.49
15
Dimensions (width x depth, mm)
167.65 x 68.9
100.45 x 69.85
Weight / without bracket (g, max)
230/229
184/NA
Environmental
Operating Temperature
0° to 55°C (Ambient)
0° to 70°C (Case)
Airflow (LFM)
300
NA
Ultrastar DC SN640

Multiple Form Factors

Allows for flexibility of system configuration. Available in U.2, M.2, and E1.L

High Capacity

Available in capacities from 800GB to 30.72TB per drive

Tunable Endurance

0.8 to 2 DWPD and beyond (up to 50% OP)

800GB/1,600GB
3,200GB/6,400GB
960GB/1,920GB
3,840GB/7,680GB
Configuration
Interface
NVMe Rev1.3c / PCIe Gen3
NVMe Rev1.3c / PCIe Gen3
NVMe Rev1.3c / PCIe Gen3
NVMe Rev1.3c / PCIe Gen3
Form Factor
U.2 7mm
U.2 7mm
U.2 7mm
U.2 7mm
Flash Memory Technology
WDC BiCS4 TLC 3D NAND
WDC BiCS4 TLC 3D NAND
WDC BiCS4 TLC 3D NAND
WDC BiCS4 TLC 3D NAND
Model Information
Endurance2
2DW/D
2DW/D
0.8DW/D
0.8DW/D
Model Number
WUS4CB080D7P3E3/
WUS4CB016D7P3E3
WUS4CB032D7P3E3/
WUS4CB064D7P3E3
WUS4BB096D7P3E3/
WUS4BB019D7P3E3
WUS4BB038D7P3E3/
WUS4BB076D7P3E3
Part Number3
0TS1952/0TS1953
0TS1954/0TS1955
0TS1927/0TS1928
0TS1929/0TS1930
Maximum Petabytes Written2
2.92/5.84
11.68/23.36
1.4/2.8
5.61/11.21
Performance4
Read Throughput
(max MiB/s, Seq 128KiB)
3K/3.1K
3.1K
3K/3.1K
3.1K
Write Throughput
(max MiB/s, Seq 128KiB)
1K/2K
1.8K
1.1K/2K
1.8K
Read IOPS (max, Rnd 4KiB)
414K/473K
468K/469K
413K/472K
469K/467K
Write IOPS (max, Rnd 4KiB)
108K/116K
115K/116K
44K/63K
63K/65K
Mixed IOPS (max, 70/30 R/W, 4KiB)
184K/307K
286K/304K
111K/194K
174K/187K
Read Latency (μ s, avg.)5
204/208
225/225
210/208
221/225
Reliability
Uncorrectable Bit Error Rate
(UBER)
1 in 1017
1 in 1017
1 in 1017
1 in 1017
MTBF6 (M hours)
2
2
2
2
Annualized Failure Rate (AFR)6
0.44%
0.44%
0.44%
0.44%
Availability
(hrs/day x days/wk)
24x7
24x7
24x7
24x7
Limited Warranty7 (years)5
5
5
5
5
Power
Requirement (DC +/- 10%)
+12V
+12V
+12V
+12V
Operating Power States
(W, typical)
10, 11, 12
10, 11, 12
10, 11, 12
10, 11, 12
Idle (W, average)
<5W
<5W
<5W
<5W
Physical Size
z-height (mm)
7.00 +0.2/-0.5
(including labels)
7.00 +0.2/-0.5
(including labels)
7.00 +0.2/-0.5
(including labels)
7.00 +0.2/-0.5
(including labels)
Dimensions
(width x length x mm)
69.85 (+/- 0.25) x 100.45
69.85 (+/- 0.25) x 100.45
69.85 (+/- 0.25) x 100.45
69.85 (+/- 0.25) x 100.45
Weight (g, max)
95
95
95
95
Environmental
Operating Temperature8
0°C to 78°C
0°C to 78°C
0°C to 78°C
0°C to 78°C
Non-Operating Temperature9
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
Ultrastar DC SN340

Outstanding Read Performance

Powered Gen3x4. Based on in-house design

Power Efficient

Exceptional Random Read IOPs/Watt

Optimized for Warm Storage

Designed for large block writes of modern workloads

U.2
Configuration
Interface
PCIe Gen 3 x4 (NVMe compliant)
Form Factor
U.2 7mm
Capacity1
3.84TB, 7.68TB
Endurance (Drive writes per day, DW/D)2
0.3 DW/D over 5 years
Flash Memory Technology
WDC BiCS4 TLC 3D NAND
NAND
Western Digital 96L TLC
Sequential Read/Write3
Up to 3.1GiB/s / 1.4 GiB/s
Random Read3
Up to 420K IOPs
Random Write3
Up to 72K IOPs
Random Mixed4
Up to 139K IOPs
Reliability (MTBF)5
2 Million Hours
Reliability (UBER)
1 in 1016 bits read
Limited Warranty 6
5 years
Active Power (Max)
6.5W
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